v rrm = 400 v - 600 v i f(av) = 200 a features ? high surge capability twin tower package ? types from 400 to 600 v v rrm ? not esd sensitive parameter symbol mur20040ct (r) unit repetitive peak reverse voltage v rrm 400 v rms reverse voltage v rms 280 v silicon super fast recover y diode mur20060ct (r) 600 420 mur20040ct thru mur20060ctr maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) conditions dc blocking voltage v dc 400 v operating temperature t j -55 to 150 c storage temperature t stg -55 to 150 c parameter symbol mur20040ct (r) unit a verage forward current (per pkg) i f(av) 200 a peak forward surge current (per leg) i fsm 2000 a maximum instantaneous forward voltage (per leg) 1.3 25 a 3ma maximum reverse recovery time (per leg) t rr 90 ns thermal characteristics maximum thermal resistance, junction - case (per leg) r jc 0.45 c/w 600 -55 to 150 -55 to 150 1.7 mur20060ct (r) 200 2000 t c = 140 c t p = 8.3 ms, half sine t j = 25 c i fm = 100 a, t j = 25 c conditions 25 electrical characteristics, at tj = 25 c, unless otherwise specified maximum reverse current at rated dc blocking voltage (per leg) i r v f 0.45 i f =0.5 a, i r =1.0 a, i rr = 0.25 a t j = 125 c v 3 110 www.genesicsemi.com/s ilicon-products/super-fast-recovery-rectifiers/ 1
mur20040ct thru mur20060ctr www.genesicsemi.com/s ilicon-products/super-fast-recovery-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. mur20040ct thru mur20060ctr www.genesicsemi.com/s ilicon-products/super-fast-recovery-rectifiers/ 3
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